View IRLHS6342PBF_8234010.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet power mosfet notes through are on page 2 features and benefits applications ?

?
2mm x 2mm pqfn g 3 s d2 d1 4s 5d 6d top view d v ds 30 v v gs 12 v r ds(on) max (@v gs = 4.5v) 15.5 m q g (typical) 11 nc i d (@t c (bottom) = 25c) 12 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (wirebond limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.1 0.02 1.3 max. 8.7 15 76 12 30 6.9 19 12 v w a c

! form quantity irlhs6342trpbf pqfn 2mm x 2mm tape and reel 4000 irlhs6342tr2pbf pqfn 2mm x 2mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note features resulting benefits low r dson ( 15.5m ) lower conduction losses low thermal resistance to pcb ( 1) 0. ) 1

!
s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.39mh, r g = 50 , i as = 8.5a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 12a by die-source to lead-frame bonding technology thermal resistance parameter typ. max. units r ) ??? 13 r ) ??? 90 c/w r ??? 60 r 10) ??? 42 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? . ) 1.0 1. 1.0 1. ) 0. 1.1 ) . 1.0 10 100 100 11 1 0. . .1 t d(on) turn-on delay time ??? 4.9 ??? t r rise time ???13??? t d(off) turn-off delay time ??? 19 ??? t f fall time ??? 13 ??? c iss input capacitance ??? 1019 ??? c oss output capacitance ??? 97 ??? c rss reverse transfer capacitance ??? 70 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 11 17 ns q rr reverse recovery charge ??? 13 20 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 10 a v gs = 2.5v, i d = 8.5a typ. m v dd = 15v, v gs = 4.5v ??? r g =1.8 v ds = 10v, i d = 8.5a v ds = 24v, v gs = 0v, t j = 125c a i d = 8.5a (see fig. 6 & 17) i d = 8.5a v gs = 0v v ds = 25v v ds = 24v, v gs = 0v t j = 25c, i f = 8.5a, v dd = 15v di/dt = 300 a/ s t j = 25c, i s = 8.5a, v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.18 max. 14 8.5 ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 8.5a ??? ??? 76 ??? ??? 12 mosfet symbol na ns a pf nc v gs = 4.5v ??? v gs = 12v v gs = -12v

!
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1.0 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.5a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 8.5a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v 60 s pulse width tj = 25c 1.4v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.4v 60 s pulse width tj = 150c vgs top 10v 4.5v 3.0v 2.5v 2.0v 1.8v 1.5v bottom 1.4v
"

!
fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 10 a i d = 25 a i d = 250 a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 18 20 i d , d r a i n c u r r e n t ( a ) limited by package 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by wire bond
#

!
fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 15. typical power vs. time fig 14. maximum avalanche energy vs. drain current fig 16.

for n-channel hexfet power mosfets

?

?
?

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period !
! + - + + + - - - ? ?
!
"#"" ? $
%% ? "#""&#
25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.9a 3.4a bottom 8.5a 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 500 600 s i n g l e p u l s e p o w e r ( w ) 0 2 4 6 8 10 12 14 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.5a t j = 125c t j = 25c 5 15 25 35 45 55 65 75 i d , drain current (a) 10 12 14 16 18 20 22 24 26 28 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 2.5v vgs = 4.5v
$

!
fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. switching time test circuit fig 19b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s '( 1 ) $
0.1 + -

!
pqfn 2x2 outline package details http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 2x2 outline part marking
%

!
pqfn 2x2 outline tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
&

!
ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per jedec j-s td-020d ?? ) rohs c ompliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level industrial ? (per jedec jesd47f ?? guidelines ) qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? updated qual level from "consumer" to "industrial" on page 1, 9 ? revision history 12/17/2013

▲Up To Search▲

Price & Availability of IRLHS6342PBF

	To Download IRLHS6342PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .